
N-channel MOSFET with 50V drain-source breakdown voltage and 15.5A continuous drain current. Features a low Rds On of 120mR and 50W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-220-3 through-hole mount with typical turn-on delay of 15ns and fall time of 50ns.
Infineon BTS115A technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15.5A |
| Current Rating | 15.5A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 735pF |
| Length | 15.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 120mR |
| RoHS Compliant | No |
| Series | TEMPFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 50V |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon BTS115A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
