N-channel MOSFET with 50V drain-source breakdown voltage and 15.5A continuous drain current. Features a low Rds On of 120mR and 50W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-220-3 through-hole mount with typical turn-on delay of 15ns and fall time of 50ns.
PackageTO-220-3
Current Rating15.5A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Infineon BTS115A technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15.5A
Current Rating
15.5A
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
50V
Fall Time
50ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
735pF
Length
15.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
120mR
RoHS Compliant
No
Series
TEMPFET®
Turn-Off Delay Time
70ns
Turn-On Delay Time
15ns
DC Rated Voltage
50V
Compliance
RoHS
Not Compliant
Datasheet
Infineon BTS115A Datasheet
Download the complete datasheet for Infineon BTS115A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
