N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 33A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 18mΩ Rds On resistance and 120W maximum power dissipation. Designed for through-hole mounting in a TO-220-5 package, it operates within a temperature range of -40°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 20ns fall time.
PackageTO-220-5
Current Rating33A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon BTS247Z technical specifications.
General
Package/Case
TO-220-5
Continuous Drain Current (ID)
33A
Current Rating
33A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
55V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.73nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
120W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
120W
Rds On Max
18mR
RoHS Compliant
Yes
Series
TEMPFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
Infineon BTS247Z Datasheet
Download the complete datasheet for Infineon BTS247Z to view detailed technical specifications.
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