N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 33A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 18mΩ Rds On resistance and 120W maximum power dissipation. Designed for through-hole mounting in a TO-220-5 package, it operates within a temperature range of -40°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 20ns fall time.
PackageTO-220-5
Current Rating33A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon BTS247Z technical specifications.
General
| Package/Case | TO-220-5 |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.73nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | TEMPFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BTS247Z Datasheet
Download the complete datasheet for Infineon BTS247Z to view detailed technical specifications.
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