
N-channel MOSFET with 49V drain-source voltage and 80A continuous drain current. Features low 6.5mR drain-source resistance and 300W maximum power dissipation. Packaged in a TO-220 through-hole mount with tin contact plating. Operates from -40°C to 175°C, with fast switching times including 30ns turn-on delay and 36ns fall time. RoHS compliant.
Infineon BTS282ZE3230AKSA2 technical specifications.
| Package/Case | TO-220 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 1.7A |
| Drain to Source Breakdown Voltage | 49V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 49V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.8nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | TEMPFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 49V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BTS282ZE3230AKSA2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
