N-channel MOSFET with 49V drain-source voltage and 80A continuous drain current. Features low 6.5mR drain-source resistance and 300W maximum power dissipation. Packaged in a TO-220 through-hole mount with tin contact plating. Operates from -40°C to 175°C, with fast switching times including 30ns turn-on delay and 36ns fall time. RoHS compliant.
PackageTO-220
Current Rating1.7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon BTS282ZE3230AKSA2 technical specifications.
General
Package/Case
TO-220
Contact Plating
Tin
Continuous Drain Current (ID)
80A
Current Rating
1.7A
Drain to Source Breakdown Voltage
49V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
49V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.8nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
6.5mR
RoHS Compliant
Yes
Series
TEMPFET®
Turn-Off Delay Time
70ns
Turn-On Delay Time
30ns
DC Rated Voltage
49V
Compliance
RoHS
Compliant
Datasheet
Infineon BTS282ZE3230AKSA2 Datasheet
Download the complete datasheet for Infineon BTS282ZE3230AKSA2 to view detailed technical specifications.
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