Dual N/P-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features 55V drain-source voltage for N-channel and 30V for P-channel, with a maximum continuous drain current of 40A. Offers low on-resistance of 11.7mOhm (N-channel) and 12.7mOhm (P-channel) at 10V Vgs. This 6-pin (5+Tab) lead-frame SMT component utilizes OptiMOS process technology for automotive applications.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon BTS7904B technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
6
PCB
5
Tab
Tab
Package Length (mm)
10
Package Width (mm)
9.25
Package Height (mm)
4.4
Seated Plane Height (mm)
4.5
Pin Pitch (mm)
1.7
Package Weight (g)
1.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Process Technology
OptiMOS
Maximum Drain Source Voltage
55@N Channel|30@P ChannelV
Maximum Gate Source Voltage
±16@N Channel|-16|5@P ChannelV
Maximum Continuous Drain Current
40A
Maximum Drain Source Resistance
11.7@10V@N Channel|12.7@10V@P ChannelmOhm
Typical Gate Charge @ Vgs
82@10V@N Channel|80@10V@P ChannelnC
Typical Gate Charge @ 10V
82@N Channel|80@P ChannelnC
Typical Input Capacitance @ Vds
4600@25V@N Channel|3900@25V@P ChannelpF
Maximum Power Dissipation
69000@N Channel|96000@P ChannelmW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BTS7904B Datasheet
Download the complete datasheet for Infineon BTS7904B to view detailed technical specifications.
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