Dual N/P-channel enhancement mode power MOSFET with OptiMOS process technology. Features 55V drain-source voltage for N-channel and 30V for P-channel, with a continuous drain current of 40A. Housed in a 5-pin TO-220 package with a tab, suitable for through-hole mounting. Offers low on-resistance of 9.7mOhm (N-channel) and 7.2mOhm (P-channel) at 10V Vgs. Operating temperature range from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon BTS7904S technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
5
PCB
5
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.4
Package Height (mm)
6.25
Package Material
Plastic
Mounting
Through Hole
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Process Technology
OptiMOS
Maximum Drain Source Voltage
55@N Channel|30@P ChannelV
Maximum Gate Source Voltage
±16@N Channel|-16|5@P ChannelV
Maximum Continuous Drain Current
40A
Maximum Drain Source Resistance
9.7@10V@N Channel|7.2@10V@P ChannelmOhm
Typical Gate Charge @ Vgs
82@10V@N Channel|80@10V@P ChannelnC
Typical Gate Charge @ 10V
82@N Channel|80@P ChannelnC
Typical Input Capacitance @ Vds
4600@25V@N Channel|3900@25V@P ChannelpF
Maximum Power Dissipation
69000@N Channel|96000@P ChannelmW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Infineon BTS7904S Datasheet
Download the complete datasheet for Infineon BTS7904S to view detailed technical specifications.
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