Dual N/P-channel enhancement mode power MOSFET with OptiMOS process technology. Features 55V drain-source voltage for N-channel and 30V for P-channel, with a continuous drain current of 40A. Housed in a 5-pin TO-220 package with a tab, suitable for through-hole mounting. Offers low on-resistance of 9.7mOhm (N-channel) and 7.2mOhm (P-channel) at 10V Vgs. Operating temperature range from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon BTS7904S technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 5 |
| PCB | 5 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 6.25 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 55@N Channel|30@P ChannelV |
| Maximum Gate Source Voltage | ±16@N Channel|-16|5@P ChannelV |
| Maximum Continuous Drain Current | 40A |
| Maximum Drain Source Resistance | 9.7@10V@N Channel|7.2@10V@P ChannelmOhm |
| Typical Gate Charge @ Vgs | 82@10V@N Channel|80@10V@P ChannelnC |
| Typical Gate Charge @ 10V | 82@N Channel|80@P ChannelnC |
| Typical Input Capacitance @ Vds | 4600@25V@N Channel|3900@25V@P ChannelpF |
| Maximum Power Dissipation | 69000@N Channel|96000@P ChannelmW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BTS7904S Datasheet
Download the complete datasheet for Infineon BTS7904S to view detailed technical specifications.
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