N-channel Power MOSFET, featuring a 200V drain-source voltage and 21A continuous drain current. This single-element SIPMOS technology transistor is housed in a TO-220AB package with 3 through-hole pins and a tab. It offers a maximum gate-source voltage of ±20V and a low drain-source on-resistance of 130mΩ at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 125W.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon BUZ 30A H technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.36(Max)
Package Width (mm)
4.57(Max)
Package Height (mm)
9.45(Max)
Seated Plane Height (mm)
20.75(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SIPMOS
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
21A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
130@10VmOhm
Typical Input Capacitance @ Vds
1400@25VpF
Maximum Power Dissipation
125000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BUZ 30A H Datasheet
Download the complete datasheet for Infineon BUZ 30A H to view detailed technical specifications.
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