N-channel enhancement mode power MOSFET in a TO-220 package, featuring a maximum drain-source voltage of 200V and a continuous drain current of 7A. This single-element SIPMOS technology transistor offers a low drain-source on-resistance of 400mΩ at 5V gate-source voltage. With a typical input capacitance of 630pF at 25V drain-source voltage, it supports through-hole mounting and operates within a temperature range of -55°C to 150°C. The 3-pin TO-220AB package includes a tab for enhanced thermal management.
PackageTO-220
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon BUZ 73 L technical specifications.
General
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 9.25 |
| Seated Plane Height (mm) | 20.2 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7A |
| Maximum Drain Source Resistance | 400@5VmOhm |
| Typical Input Capacitance @ Vds | 630@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BUZ 73 L Datasheet
Download the complete datasheet for Infineon BUZ 73 L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.