N-channel enhancement mode power MOSFET featuring a 200V drain-source voltage and 5.5A continuous drain current. This single-element SIPMOS technology transistor is housed in a 3-pin TO-220AB through-hole package with a 2.54mm pin pitch. Key specifications include a maximum gate-source voltage of ±20V, 600mΩ drain-source on-resistance at 10V, and 40W maximum power dissipation. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon BUZ 73A H technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5.5A |
| Maximum Drain Source Resistance | 600@10VmOhm |
| Typical Input Capacitance @ Vds | 400@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BUZ 73A H Datasheet
Download the complete datasheet for Infineon BUZ 73A H to view detailed technical specifications.
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