N-channel enhancement mode power MOSFET featuring a 200V drain-source voltage and 7A continuous drain current. This single-element SIPMOS technology transistor is housed in a TO-220 package with 3 through-hole pins and a tab. It offers a maximum power dissipation of 40000mW and a low drain-source on-resistance of 400mOhm at 5V gate-source voltage. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon BUZ 73L H technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.36(Max)
Package Width (mm)
4.57(Max)
Package Height (mm)
9.45(Max)
Seated Plane Height (mm)
20.75(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SIPMOS
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
7A
Maximum Drain Source Resistance
400@5VmOhm
Typical Input Capacitance @ Vds
630@25VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Infineon BUZ 73L H Datasheet
Download the complete datasheet for Infineon BUZ 73L H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.