N-channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a 200V Drain to Source Breakdown Voltage (Vdss) and a continuous Drain Current (ID) of 14.5A. Offers a low Drain to Source Resistance (Rds On Max) of 200mΩ. Packaged in a TO-220AB plastic housing, this component boasts a maximum power dissipation of 95W and operates within a temperature range of -55°C to 150°C. It is RoHS compliant and halogen-free.
PackageTO-220-3
PolarityN-CHANNEL
Power95W
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Technical Specifications
Infineon BUZ31H technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 14.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 1.12nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 95W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 12ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BUZ31H Datasheet
Download the complete datasheet for Infineon BUZ31H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.