N-Channel Power MOSFET, 200V Vdss, 14.5A Continuous Drain Current, and 0.2 Ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-262-3 package with tin plating and through-hole mounting. It offers a maximum power dissipation of 95W and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and halogen-free.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power95W
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Technical Specifications
Infineon BUZ31H3046XKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 14.5A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 1.12nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 95W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 12ns |
| Width | 4.52mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BUZ31H3046XKSA1 Datasheet
Download the complete datasheet for Infineon BUZ31H3046XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.