N-channel power MOSFET featuring 200V drain-source breakdown voltage and 13.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.2-ohm drain-source resistance and 95W maximum power dissipation. Designed for high-performance applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-220AB package. Key switching characteristics include a 25ns turn-on delay and 65ns fall time.
PackageTO-220-3
PolarityN-CHANNEL
Power95W
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Technical Specifications
Infineon BUZ31LH technical specifications.
General
| Package/Case | TO-220-3 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 200mR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 1.6nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 95W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 25ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BUZ31LH Datasheet
Download the complete datasheet for Infineon BUZ31LH to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.