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BUZ338 Datasheet | MOSFETs | Infineon

BUZ338

Power Field-Effect Transistor, 13.5A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218

BUZ338

Power Field-Effect Transistor, 13.5A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218

Semiconductors
Discrete Semiconductors

Semiconductors
Discrete Semiconductors
Transistors
MOSFETs

PackageTO-218

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Technical Specifications

Infineon BUZ338 technical specifications.

General

Package/Case	TO-218
RoHS Compliant	No

Compliance

RoHS	Not Compliant

Datasheet

Infineon BUZ338 Datasheet

Download the complete datasheet for Infineon BUZ338 to view detailed technical specifications.

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