N-channel MOSFET for through-hole mounting in a TO-220AB package. Features a 200V drain-source breakdown voltage and a continuous drain current of 7A. Offers a low Rds(on) of 400mΩ at a nominal Vgs of 3V. Includes a maximum power dissipation of 40W and operates across a temperature range of -55°C to 150°C. Fall time is 30ns with a turn-off delay of 55ns.
PackageTO-220AB
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon BUZ73 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 530pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BUZ73 Datasheet
Download the complete datasheet for Infineon BUZ73 to view detailed technical specifications.
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