BUZ73A

N-Channel MOSFET, 200V, 5.5A, 0.6ohm, TO-220AB

N-Channel Power MOSFET, TO-220AB package, featuring a 200V drain-source breakdown voltage and 5.5A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.6 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 40W. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and includes a 20V gate-to-source voltage rating.

PackageTO-220AB

Current Rating5.5A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Infineon BUZ73A technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	5.5A
Current Rating	5.5A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	600mR
Drain to Source Voltage (Vdss)	200V
Dual Supply Voltage	200V
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	530pF
Lead Free	Lead Free
Lead Pitch	2.54mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	40W
Mount	Through Hole
Nominal Vgs	3V
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	40W
Rds On Max	600mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	SIPMOS®
Termination	Through Hole
Turn-Off Delay Time	55ns
DC Rated Voltage	200V