BUZ73AH

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

PolarityN-CHANNEL

Power40W

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Infineon BUZ73AH technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	5.5A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	600mR
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	530pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	40W
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	40W
Rds On Max	600mR
RoHS Compliant	Yes
Series	SIPMOS®
Turn-Off Delay Time	55ns
Turn-On Delay Time	10ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.