N-channel power MOSFET featuring 200V drain-source breakdown voltage and 5.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 600mΩ at a nominal gate-source voltage of 1.6V. Designed for through-hole mounting in a TO-220AB plastic package, it supports a maximum power dissipation of 40W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 40ns fall time and 100ns turn-off delay time, with an input capacitance of 840pF. This RoHS compliant component is supplied in rail/tube packaging.
PackageTO-220AB
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon BUZ73AL technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 840pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | 1.6V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BUZ73AL Datasheet
Download the complete datasheet for Infineon BUZ73AL to view detailed technical specifications.
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