BUZ73H

MOSFET N-CH 200V 7A 400mR TO-220

N-channel MOSFET transistor featuring a 200V drain-to-source breakdown voltage (Vdss) and a continuous drain current (ID) of 7A. This component offers a low on-resistance (Rds On Max) of 400mR and a maximum power dissipation of 40W. Designed for efficient switching, it exhibits a turn-on delay time of 10ns and a fall time of 30ns. Encased in a TO-220-3 package, this RoHS and Halogen Free transistor operates within a temperature range of -55°C to 150°C.

PackageTO-220-3

PolarityN-CHANNEL

Power40W

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Technical Specifications

Infineon BUZ73H technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	7A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	400mR
Drain to Source Voltage (Vdss)	200V
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Height	9.45mm
Input Capacitance	530pF
Length	10.36mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	40W
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	40W
Rds On Max	400mR
RoHS Compliant	Yes
Series	SIPMOS®
Turn-Off Delay Time	55ns
Turn-On Delay Time	10ns
Width	4.57mm