The DDB2U30N08VR is a 600V insulated gate bipolar transistor (IGBT) module with a maximum collector current of 25A. It is packaged in a module with a screw mount and measures 35.6mm in length, 25.4mm in width, and 12mm in height. The module is rated for operation between -40°C and 125°C. It is available in a tray packaging with 40 units per package.
PackageModule
MountingScrew
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Technical Specifications
Infineon DDB2U30N08VR technical specifications.
General
| Package/Case | Module |
| Collector-emitter Voltage-Max | 600V |
| Height | 12mm |
| Length | 35.6mm |
| Max Collector Current | 25A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 40 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Width | 25.4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon DDB2U30N08VR Datasheet
Download the complete datasheet for Infineon DDB2U30N08VR to view detailed technical specifications.
No datasheet is available for this part.