Infineon
DDB6U75N16W1R
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27
PackageModule
MountingPCB, Through Hole
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Technical Specifications
Infineon DDB6U75N16W1R technical specifications.
General
Package/Case
Module
Forward Current
75A
Height
12mm
Length
48mm
Max Collector Current
69A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Repetitive Reverse Voltage (Vrrm)
1.6kV
Max Reverse Current
1mA
Mount
PCB, Through Hole
RoHS Compliant
Yes
Width
33.8mm
Compliance
RoHS
Compliant
Datasheet
Infineon DDB6U75N16W1R Datasheet
Download the complete datasheet for Infineon DDB6U75N16W1R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.