The DF900R12IP4D is a 1.2kV insulated gate bipolar transistor with a collector emitter voltage of 1.7V and a maximum power dissipation of 5.1kW. It is packaged in a FLANGE MOUNT, R-XUFM-X6 module and is designed for screw mounting. The transistor operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations.
PackageModule
MountingScrew
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Technical Specifications
Infineon DF900R12IP4D technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 5.1kW |
| Mount | Screw |
| Package Quantity | 3 |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon DF900R12IP4D Datasheet
Download the complete datasheet for Infineon DF900R12IP4D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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