Bidirectional transient voltage suppressor diode featuring 18000W peak pulse power dissipation and a 5.5V reverse standoff voltage. This silicon diode offers a maximum breakdown voltage of 18.5V and operates across a wide temperature range from -55°C to 125°C. Designed with a single element and two terminals, it provides robust protection in a compact package.
PolarityBIDIRECTIONAL
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Technical Specifications
Infineon ESD108B1CSP0201XTSA1 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5.5 |
| Non-rep Peak Rev Power Dis-Max | 18000 |
| Breakdown Voltage-Max | 18.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon ESD108B1CSP0201XTSA1 Datasheet
Download the complete datasheet for Infineon ESD108B1CSP0201XTSA1 to view detailed technical specifications.
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