The F3L200R07PE4BOSA1 is a 650V insulated gate bipolar transistor (IGBT) module from Infineon, featuring a maximum collector current of 200A and a maximum power dissipation of 680W. It operates within a temperature range of -40°C to 150°C and is mounted on a chassis or PCB. The module has an input capacitance of 12.5nF and is compliant with RoHS regulations.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 650V |
| Collector-emitter Voltage-Max | 1.95V |
| Height | 17mm |
| Input | Standard |
| Input Capacitance | 12.5nF |
| Length | 130mm |
| Max Collector Current | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 680W |
| Mount | Chassis Mount, PCB |
| NTC Thermistor | Yes |
| Package Quantity | 6 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Width | 70.6mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon F3L200R07PE4BOSA1 to view detailed technical specifications.
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