The Infineon F4-30R06W1E3 is a 600V insulated gate bipolar transistor (IGBT) packaged in a module with a maximum collector current of 48A and maximum power dissipation of 165W. It has a collector-emitter breakdown voltage of 600V and a collector-emitter saturation voltage of 1.55V. The module is designed for screw mounting and has a package quantity of 24 per tray. The F4-30R06W1E3 operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations.
PackageModule
MountingScrew
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Technical Specifications
Infineon F4-30R06W1E3 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 600V |
| Height | 12mm |
| Length | 62.8mm |
| Max Collector Current | 48A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 165W |
| Mount | Screw |
| Package Quantity | 24 |
| Packaging | Tray |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 33.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon F4-30R06W1E3 Datasheet
Download the complete datasheet for Infineon F4-30R06W1E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.