Infineon
FD1000R33HE3KBPSA1
Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
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Technical Specifications
Infineon FD1000R33HE3KBPSA1 technical specifications.
General
Number of Terminals
9
Terminal Position
UPPER
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon FD1000R33HE3KBPSA1 Datasheet
Download the complete datasheet for Infineon FD1000R33HE3KBPSA1 to view detailed technical specifications.
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