Infineon
FD1400R12IP4D
Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel, MODULE-12
PackageModule
Quick Jump:
Technical Specifications
Infineon FD1400R12IP4D technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Voltage (VCEO)
1.75V
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
7.7kW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FD1400R12IP4D Datasheet
Download the complete datasheet for Infineon FD1400R12IP4D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.