Infineon
FF100R12MT4
Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
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Technical Specifications
Infineon FF100R12MT4 technical specifications.
General
Package/Case
Module
Collector-emitter Voltage-Max
1.2kV
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Package Quantity
10
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FF100R12MT4 Datasheet
Download the complete datasheet for Infineon FF100R12MT4 to view detailed technical specifications.
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