N-Channel Silicon Metal-oxide Semiconductor FET module featuring 1200V breakdown voltage and 100A continuous drain current. This 2-element device offers 18 terminals with upper terminal positioning. Minimum operating temperature is -40°C.
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Technical Specifications
Infineon FF11MR12W1M1B11BOMA1 technical specifications.
General
| Number of Terminals | 18 |
| Min Operating Temperature | -40 |
| Terminal Position | UPPER |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon FF11MR12W1M1B11BOMA1 Datasheet
Download the complete datasheet for Infineon FF11MR12W1M1B11BOMA1 to view detailed technical specifications.
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