Infineon
FF1200R12KE3
Insulated Gate Bipolar Transistor, 1600A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
PackageModule
MountingScrew
Power5kW
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Technical Specifications
Infineon FF1200R12KE3 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector-emitter Voltage-Max | 1.2kV |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| Max Collector Current | 1.6kA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 2 |
| Power Dissipation | 5kW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon FF1200R12KE3 Datasheet
Download the complete datasheet for Infineon FF1200R12KE3 to view detailed technical specifications.
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