Infineon
FF150R12KS4
Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
PackageModule
MountingPanel, Screw
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Technical Specifications
Infineon FF150R12KS4 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Height
29mm
Length
106.4mm
Max Collector Current
225A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.25kW
Mount
Panel, Screw
RoHS Compliant
Yes
Width
61.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon FF150R12KS4 Datasheet
Download the complete datasheet for Infineon FF150R12KS4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.