Infineon
FF150R12KT3GHOSA1
Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
PackageModule
MountingChassis Mount, Screw
Power780W
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Technical Specifications
Infineon FF150R12KT3GHOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.15V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.15V
Input
Standard
Input Capacitance
11nF
Max Collector Current
225A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
780W
Mount
Chassis Mount, Screw
NTC Thermistor
No
Package Quantity
10
Packaging
Bulk
Power Dissipation
780W
Radiation Hardening
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FF150R12KT3GHOSA1 Datasheet
Download the complete datasheet for Infineon FF150R12KT3GHOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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