FF150R12MS4G

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

PackageModule

MountingScrew

Power1.25kW

Quick Jump:

Infineon FF150R12MS4G technical specifications.

Package/Case

Module

Collector Emitter Saturation Voltage

3.7V

Collector-emitter Voltage-Max

1.2kV

Lead Free

Max Collector Current

225A

Max Operating Temperature

125°C

Min Operating Temperature

-40°C

Mount

Screw

Package Quantity

Power Dissipation

1.25kW

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.