The FF200R17KE4HOSA1 is a 1.7kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 310A. It is designed for use in high-power applications and has a maximum operating temperature of 150°C. The device is mounted in a flange mount package and is suitable for use in a variety of chassis mount configurations. The FF200R17KE4HOSA1 is compliant with RoHS regulations and is available in bulk packaging.
PackageModule
MountingChassis Mount, Screw
PolarityNPN
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Technical Specifications
Infineon FF200R17KE4HOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.95V |
| Collector-emitter Voltage-Max | 2.3V |
| Input | Standard |
| Input Capacitance | 18nF |
| Max Collector Current | 310A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.25kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Bulk |
| Polarity | NPN |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF200R17KE4HOSA1 Datasheet
Download the complete datasheet for Infineon FF200R17KE4HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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