Small signal field-effect transistor designed for electronic circuits. Features a high input impedance and low noise characteristics, making it suitable for amplification and switching applications. Operates with a low gate leakage current and offers excellent linearity. Ideal for sensitive signal processing and low-power designs.
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Technical Specifications
Infineon FF23MR12W1M1B11BOMA1 technical specifications.
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon FF23MR12W1M1B11BOMA1 Datasheet
Download the complete datasheet for Infineon FF23MR12W1M1B11BOMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.