Small signal field-effect transistor designed for electronic circuits. Features a high input impedance and low noise characteristics, making it suitable for amplification and switching applications. Operates with a low gate leakage current and offers excellent linearity. Ideal for sensitive signal processing and low-power designs.
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Technical Specifications
Infineon FF23MR12W1M1B11BOMA1 technical specifications.
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon FF23MR12W1M1B11BOMA1 Datasheet
Download the complete datasheet for Infineon FF23MR12W1M1B11BOMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.