The FF400R07KE4 is a high-power insulated gate bipolar transistor module with a collector-emitter breakdown voltage of 650V and a maximum collector current of 485A. It is designed for operation in temperatures ranging from -40°C to 150°C and has a maximum power dissipation of 1.25kW. The module is mounted using screws and is compliant with RoHS regulations.
PackageModule
MountingScrew
PolarityNPN
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Technical Specifications
Infineon FF400R07KE4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Voltage (VCEO) | 1.55V |
| Max Collector Current | 485A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.25kW |
| Mount | Screw |
| Polarity | NPN |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF400R07KE4 Datasheet
Download the complete datasheet for Infineon FF400R07KE4 to view detailed technical specifications.
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