Infineon
FF400R33KF2CNOSA1
Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel, MODULE-10
PackageModule
MountingChassis Mount
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Technical Specifications
Infineon FF400R33KF2CNOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
3.3kV
Collector Emitter Saturation Voltage
3.4V
Collector-emitter Voltage-Max
4.25V
Height
38mm
Input
Standard
Input Capacitance
50nF
Length
140mm
Max Collector Current
660A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
4.8kW
Mount
Chassis Mount
NTC Thermistor
No
Package Quantity
2
Packaging
Bulk
RoHS Compliant
No
Width
130mm
Compliance
RoHS
Not Compliant
Datasheet
Infineon FF400R33KF2CNOSA1 Datasheet
Download the complete datasheet for Infineon FF400R33KF2CNOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.