The FF600R12IS4F is a flange mount insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 600A. It has a maximum power dissipation of 3.7kW and operates within a temperature range of -40°C to 125°C. The device is packaged in a module with a standard input and features an NTC thermistor. It is RoHS compliant and available in a tray packaging with 3 units per package.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FF600R12IS4F technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.75V |
| Input | Standard |
| Input Capacitance | 39nF |
| Max Collector Current | 600A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.7kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Package Quantity | 3 |
| Packaging | Tray |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF600R12IS4F Datasheet
Download the complete datasheet for Infineon FF600R12IS4F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.