Infineon
FF600R12IS4F
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FF600R12IS4F technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
3.75V
Input
Standard
Input Capacitance
39nF
Max Collector Current
600A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.7kW
Mount
Chassis Mount, Screw
NTC Thermistor
Yes
Package Quantity
3
Packaging
Tray
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FF600R12IS4F Datasheet
Download the complete datasheet for Infineon FF600R12IS4F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.