Infineon
FF600R12KL4C
Insulated Gate Bipolar Transistor, 950A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
PackageModule
MountingScrew
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Technical Specifications
Infineon FF600R12KL4C technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.1V
Collector-emitter Voltage-Max
1.2kV
Height
38mm
Length
140mm
Max Collector Current
950A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.9W
Mount
Screw
Package Quantity
2
RoHS Compliant
No
Width
130mm
Compliance
RoHS
Not Compliant
Datasheet
Infineon FF600R12KL4C Datasheet
Download the complete datasheet for Infineon FF600R12KL4C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.