Infineon
FF650R17IE4BOSA1
Insulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
PackageModule
MountingChassis Mount, Screw
Power4.15kW
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Technical Specifications
Infineon FF650R17IE4BOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.7kV
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage (VCEO)
1.7kV
Collector-emitter Voltage-Max
2.45V
Input
Standard
Input Capacitance
54nF
Lead Free
Lead Free
Max Collector Current
5mA
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
4.15kW
Mount
Chassis Mount, Screw
NTC Thermistor
Yes
Package Quantity
3
Power Dissipation
4.15kW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PrimePack™2
Compliance
RoHS
Compliant
Datasheet
Infineon FF650R17IE4BOSA1 Datasheet
Download the complete datasheet for Infineon FF650R17IE4BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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