The FF800R12KE3 is an insulated gate bipolar transistor (IGBT) module from Infineon, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 1.2kA. It operates within a temperature range of -40°C to 125°C and is mounted via screws. The module has a power dissipation of 3.9kW and is available in a package quantity of 8. Although not RoHS compliant, this IGBT module is suitable for high-power applications.
PackageModule
MountingScrew
Power3.9kW
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Technical Specifications
Infineon FF800R12KE3 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 1.2kA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 8 |
| Power Dissipation | 3.9kW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon FF800R12KE3 Datasheet
Download the complete datasheet for Infineon FF800R12KE3 to view detailed technical specifications.
No datasheet is available for this part.