Infineon
FF800R12KF4
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
PackageModule
MountingChassis Mount, Screw
Power5kW
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Technical Specifications
Infineon FF800R12KF4 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.7V
Collector-emitter Voltage-Max
3.2V
Input
Standard
Input Capacitance
55nF
Max Collector Current
800A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
5kW
Mount
Chassis Mount, Screw
NTC Thermistor
No
Package Quantity
8
Packaging
Bulk
Power Dissipation
5kW
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Infineon FF800R12KF4 Datasheet
Download the complete datasheet for Infineon FF800R12KF4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.