The FF800R12KF4 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 800A. It operates within a temperature range of -40°C to 125°C and has a maximum power dissipation of 5kW. The device is packaged in a module with a chassis mount and screw connection. It is not RoHS compliant.
PackageModule
MountingChassis Mount, Screw
Power5kW
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Technical Specifications
Infineon FF800R12KF4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 3.2V |
| Input | Standard |
| Input Capacitance | 55nF |
| Max Collector Current | 800A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 5kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 8 |
| Packaging | Bulk |
| Power Dissipation | 5kW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon FF800R12KF4 Datasheet
Download the complete datasheet for Infineon FF800R12KF4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.