Infineon
FF800R12KL4C
Insulated Gate Bipolar Transistor, 1250A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
PackageModule
MountingScrew
Power5kW
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Technical Specifications
Infineon FF800R12KL4C technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.1V
Collector-emitter Voltage-Max
1.2kV
Max Collector Current
1.25kA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Mount
Screw
Package Quantity
8
Power Dissipation
5kW
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Infineon FF800R12KL4C Datasheet
Download the complete datasheet for Infineon FF800R12KL4C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.