Infineon
FF800R17KP4_B2
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
PackageModule
MountingScrew
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Technical Specifications
Infineon FF800R17KP4_B2 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.7kV
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
1.2kA
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
4.85kW
Mount
Screw
Package Quantity
2
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Infineon FF800R17KP4_B2 Datasheet
Download the complete datasheet for Infineon FF800R17KP4_B2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.