The FP10R06KL4 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 16A. It has a maximum power dissipation of 55W and operates within a temperature range of -40°C to 125°C. The device is packaged in a flange mount R-XUFM-X23 package and is not radiation hardened. It is not RoHS compliant.
PackageModule
MountingScrew
Power55W
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Technical Specifications
Infineon FP10R06KL4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector-emitter Voltage-Max | 600V |
| Height | 17mm |
| Length | 55.9mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 55W |
| Mount | Screw |
| Package Quantity | 20 |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Width | 45.6mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon FP10R06KL4 Datasheet
Download the complete datasheet for Infineon FP10R06KL4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.