The FP10R12KE3 is an insulated gate bipolar transistor with a collector emitter saturation voltage of 1.9V and a continuous collector current of 15A. It is packaged in a module with a height of 17.5mm and is designed for screw mounting. The device is RoHS compliant and has a maximum operating temperature of 125°C and a minimum operating temperature of -40°C. The FP10R12KE3 is suitable for high-power applications due to its 55W power dissipation capability.
PackageModule
MountingScrew
Power55W
Quick Jump:
Technical Specifications
Infineon FP10R12KE3 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 1.9V |
| Continuous Collector Current | 15A |
| Height | 17.5mm |
| Max Collector Current | 15A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 292ns |
| Turn-On Delay Time | 52ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP10R12KE3 Datasheet
Download the complete datasheet for Infineon FP10R12KE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
