The FP15R12YT3 is an insulated gate bipolar transistor from Infineon with a maximum collector-emitter voltage of 1.2kV and a maximum collector current of 25A. It is designed for use in high-power applications and has a maximum operating temperature of 125°C. The device is packaged in a FLANGE MOUNT, R-XUFM-X23 package and is available in quantities of 20. The FP15R12YT3 is compliant with RoHS regulations and is not radiation hardened.
PackageModule
MountingScrew
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Technical Specifications
Infineon FP15R12YT3 technical specifications.
General
| Package/Case | Module |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 12mm |
| Length | 55.9mm |
| Max Collector Current | 25A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 20 |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 45.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP15R12YT3 Datasheet
Download the complete datasheet for Infineon FP15R12YT3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.