Infineon
FP25R12KS4C
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
PackageModule
MountingPCB, Screw
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Technical Specifications
Infineon FP25R12KS4C technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 230W |
| Mount | PCB, Screw |
| RoHS Compliant | Yes |
| Width | 45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP25R12KS4C Datasheet
Download the complete datasheet for Infineon FP25R12KS4C to view detailed technical specifications.
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