N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter breakdown voltage and a 500A continuous collector current. This power semiconductor component is housed in an ECONOPACK-29 package with 29 terminals, all positioned at the upper end. It incorporates 6 elements and supports a maximum operating temperature of 150°C.
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Technical Specifications
Infineon FS300R12KE3BOSA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 29 |
| Terminal Position | UPPER |
| Pin Count | 29 |
| Number of Elements | 6 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon FS300R12KE3BOSA1 Datasheet
Download the complete datasheet for Infineon FS300R12KE3BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.