The FS400R12A2T4 is a high-power insulated gate bipolar transistor (IGBT) from Infineon, featuring a collector-emitter voltage rating of 1.2kV and a continuous collector current of 400A. It operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 1.5kW. The device is packaged in a flange mount with a height of 29mm and is compliant with RoHS regulations.
Power1.5kW
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Technical Specifications
Infineon FS400R12A2T4 technical specifications.
General
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Continuous Collector Current | 400A |
| Height | 29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.5kW |
| Package Quantity | 3 |
| Power Dissipation | 1.5kW |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 420ns |
| Turn-On Delay Time | 160ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FS400R12A2T4 Datasheet
Download the complete datasheet for Infineon FS400R12A2T4 to view detailed technical specifications.
No datasheet is available for this part.