The FS50R12W2T4_B11 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 83A. It is designed to operate within a temperature range of -40°C to 150°C and has a maximum power dissipation of 335W. The device is packaged in a module with a screw mount and is compliant with RoHS regulations.
PackageModule
MountingScrew
Power335W
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Technical Specifications
Infineon FS50R12W2T4_B11 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.15V |
| Collector Emitter Voltage (VCEO) | 1.85V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 83A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 335W |
| Mount | Screw |
| Package Quantity | 15 |
| Power Dissipation | 335W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FS50R12W2T4_B11 Datasheet
Download the complete datasheet for Infineon FS50R12W2T4_B11 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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